voltage: Vf(t,vgsvth)=2*0.026*log(draincurrent(t,vgsvth)/10e-8) set output "IvsV_IGBT.eps" set parametric set sample 2000 this is totally non physical: we calculate...
holder of this work, hereby publish it under the following license: English Static characteristic of a imaginary Insulated Gate Bipolar Transistor (IGBT)...
Static characteristic of a imaginary Insulated Gate Bipolar Transistor (IGBT) author name string: Д.Ильин Wikimedia username: Д.Ильин URL: https://commons...
